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"Mainstream GaN" Today and Tomorrow: Spotlight on NXP's High-Performance GaN Solutions at International Microwave Symposium 2012

07:00 EDT Tuesday, June 19, 2012

EINDHOVEN, THE NETHERLANDS and MONTREAL--(Marketwire - June 19, 2012) - </b>Recognized as a compelling alternative to silicon for many RF applications, GaN (gallium nitride) technology has generated significant industry interest due to its performance advantages, but has faced significant challenges related to cost -- until now. At IEEE MTT-S International Microwave Symposium in Montreal this week, NXP Semiconductors N.V. (NASDAQ: NXPI) will demonstrate its full portfolio of first-generation GaN products (booth 607), and discuss its vision and roadmap related to GaN. Core to that vision is the concept of "mainstream GaN" -- bringing economies of scale and over 30 years of experience in RF power transistors to enable innovation and a secure, reliable supply chain for RF GaN products. A preview of NXP's demonstrations this week is available here: http://www.youtube.com/watch?v=KvQTou6K4Xw

"Since announcing our commitment to 'mainstream GaN' last year, we've received a great deal of interest in our GaN offerings and have worked intensively with a handful of key customers to refine our first-generation GaN portfolio," said Mark Murphy, director of marketing, RF power product line, NXP Semiconductors. "At the same time, by offering our customers a choice between high-performance GaN and LDMOS -- and in some situations a mix of both -- we're in the unique position of being able to offer unbiased choices for fully optimized designs, depending on the specific requirements of each application."

Mainstream GaN Today: Samples, Application Examples and a Reliable Supply Chain

</b>NXP currently offers engineering samples of its first-generation GaN products, including the CLF1G0035-50 and CLF1G0035-100 amplifiers for 50W and 100W broadband applications. At IMS2012, NXP will demonstrate live application examples, including a multi-stage GaN line-up covering a 200 - 2700 MHz frequency band. Using NXP's new CLF1G0060-10 driver, as well as the CLF1G0035-50 amplifier for the output stage, the GaN line-up features 50V GaN technology and best-in-class linearity. Due to the higher impedance levels of the 50V GaN process, broadband amplifiers can be designed on a single transistor.

Based on a 0.5 µm gate-length technology developed in collaboration with the Fraunhofer IAF Institute in Freiburg, as well as United Monolithic Semiconductors (UMS) in Ulm, Germany, NXP's first-generation GaN amplifiers feature excellent linearity without compromise in power, ruggedness and efficiency, significantly reducing component count and amplifier footprint. NXP's collaboration with UMS and Fraunhofer IAF Institute also establishes a Europe-based supply chain for GaN technology.

NXP will be ramping up for volume production and offering engineering samples of additional GaN amplifiers in Q3 and Q4. Further information is available in the NXP RF Manual, 16th edition and at http://www.nxp.com/techzones/hprf-techzone/technologies/gan.html

Mainstream GaN Tomorrow

</b>At IMS2012, NXP will also be featuring advanced applications using GaN, including a live Class E amplifier tuned for 2.45 GHz, showing the breakthrough efficiency enabled by GaN. Featuring a transistor with internal Class E harmonic matching, the amplifier achieves best-in-class efficiency of 75.2% @ 24W at 2.45 GHz. Based on a 0.25 µm gate-length technology currently under development, NXP plans to make its high-efficiency Class E narrow-band GaN solutions available in 2013.

NXP is also developing a digital power amplifier using GaN switching transistors that offer higher efficiency than linear amplifiers. These switched-mode power amplifiers (SMPAs) can be used in multiple bands without any modification to the hardware, and will be a key driver of the "ultimate" base station of the future. Like NXP's other GaN processes, the 0.25 µm GHSM process uses SiC substrates for better reliability, superior RF performance, and enhanced thermal management, further underscoring the advantages of an unbiased approach to GaN.

While RF GaN has already gained significant traction in the aerospace and defense market, NXP is also focusing on future growth areas including wireless infrastructure and base stations, energy transfer, and the sensing and imaging markets.

NXP will discuss further highlights of its GaN roadmap during IMS2012 sessions including:

- Special panel session on GaN market opportunities hosted by Microwave Journal and Strategy Analytics on Wednesday, June 20 at 8:00 am Eastern Time (Room 516)

- Workshop on "The position of GaN within RF power-capable technologies: NXP's view" on Thursday, June 21 at 10:50 am Eastern Time (MICROAPPS Theater)

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Links</b>

- VIDEO: Preview of NXP GaN demo at IMS2012: http://youtu.be/KvQTou6K4Xw

- GaN solutions from NXP: http://www.nxp.com/techzones/hprf-techzone/technologies/gan.html

- NXP RF Manual, 16th Edition: http://www.nxp.com/products/related/rf-manual/

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About NXP Semiconductors

</b>NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. A global semiconductor company with operations in more than 25 countries, NXP posted revenue of $4.2 billion in 2011. Additional information can be found by visiting www.nxp.com.

Forward-looking Statements</b>

This document includes forward-looking statements which include statements regarding NXP's business strategy, financial condition, results of operations, and market data, as well as any other statements which are not historical facts. By their nature, forward-looking statements are subject to numerous factors, risks and uncertainties that could cause actual outcomes and results to be materially different from those projected. These factors, risks and uncertainties include the following: market demand and semiconductor industry conditions; the ability to successfully introduce new technologies and products; the end-market demand for the goods into which NXP's products are incorporated; the ability to generate sufficient cash, raise sufficient capital or refinance corporate debt at or before maturity; the ability to meet the combination of corporate debt service, research and development and capital investment requirements; the ability to accurately estimate demand and match manufacturing production capacity accordingly or obtain supplies from third-party producers; the access to production capacity from third-party outsourcing partners; any events that might affect third-party business partners or NXP's relationship with them; the ability to secure adequate and timely supply of equipment and materials from suppliers; the ability to avoid operational problems and product defects and, if such issues were to arise, to correct them quickly; the ability to form strategic partnerships and joint ventures and to successfully cooperate with alliance partners; the ability to win competitive bid selection processes to develop products for use in customers' equipment and products; the ability to successfully establish a brand identity; the ability to successfully hire and retain key management and senior product architects; and, the ability to maintain good relationships with our suppliers. In addition, this document contains information concerning the semiconductor industry and NXP's business segments generally, which is forward-looking in nature and is based on a variety of assumptions regarding the ways in which the semiconductor industry, NXP's market segments and product areas may develop. NXP has based these assumptions on information currently available, if any one or more of these assumptions turn out to be incorrect, actual market results may differ from those predicted. While NXP does not know what impact any such differences may have on its business, if there are such differences, its future results of operations and its financial condition could be materially adversely affected. Readers are cautioned not to place undue reliance on these forward-looking statements, which speak to results only as of the date the statements were made. Except for any ongoing obligation to disclose material information as required by the United States federal securities laws, NXP does not have any intention or obligation to publicly update or revise any forward-looking statements after we distribute this document, whether to reflect any future events or circumstances or otherwise. For a discussion of potential risks and uncertainties, please refer to the risk factors listed in our SEC filings. Copies of our SEC filings are available from on our Investor Relations website, www.nxp.com/investor or from the SEC website, www.sec.gov.

FOR FURTHER INFORMATION PLEASE CONTACT:

For further press information, please contact:
OR
Eureka Endo
Global:
+44 795 828 7483
eureka.endo@nxp.com
OR
Jannet Chen
GC :
+86 21 22055883
jannet.chen@nxp.com
OR
Allen Tsai
NA:
+1 415 593 8449
allen.tsai@text100.com
OR
Lilian Li
APAC:
+86 21 22052615
lilian.li@nxp.com




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